Tuning the remanent polarization of epitaxial ferroelectric thin films with strain

J. X. Zhang, D. G. Schlom, L. Q. Chen, C. B. Eom

Research output: Contribution to journalArticle

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Abstract

The effect of biaxial strain on the remanent polarization of epitaxial thin films of various ferroelectric materials is studied using phenomenological Landau-Devonshire theory. It is shown that the strain dependences of the remanent polarizations are strongly dependent on crystal symmetries and film orientations. For (001)p-oriented ferroelectric films with (distorted) rhombohedral symmetry, strain-induced polarization rotation leads to stronger strain dependences than in ferroelectric films with tetragonal or orthorhombic symmetries. For (111)p-oriented ferroelectric films with rhombohedral symmetry, however, the remanent polarization is less sensitive to the biaxial strain.

Original languageEnglish (US)
Article number122904
JournalApplied Physics Letters
Volume95
Issue number12
DOIs
StatePublished - Oct 12 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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