Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

Huichu Liu, Ramesh Vaddi, Suman Datta, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Scopus citations

Abstract

Hetero-junction Tunnel FET (HTFET) for ultra-low power RF circuit design has been explored at the device and circuit level. In this paper, benchmarking and design insights for optimizing the performance of the TFET based differential drive rectifier is presented. Our evaluation of the HTFET based rectifier demonstrates its promise compared to the state-of-art passive RFIDs. With the 10-stage optimized TFET rectifier at 915 MHz, PCE of 98% with 0.5 nW power consumption, sensitivity of -24dBm for 9 μW PDC and sensitivity of -33dBm for 0.4μW PDC were achieved.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2013
Pages157-162
Number of pages6
DOIs
StatePublished - Dec 11 2013
Event2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013 - Beijing, China
Duration: Sep 4 2013Sep 6 2013

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Other

Other2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013
Country/TerritoryChina
CityBeijing
Period9/4/139/6/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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