Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

R. Pandey, N. Agrawal, V. Chobpattana, K. Henry, M. Kuhn, H. Liu, M. Labella, C. Eichfeld, K. Wang, J. Maier, S. Stemmer, S. Mahapatra, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages14.2.1-14.2.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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