Tunnel transistors for low power logic

S. Datta, R. Bijesh, H. Liu, D. Mohata, V. Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Tunnel transistor (TFET) as steep slope device to enable supply voltage scaling is explored at the device level as well as circuit level. Hetero-junction TFET is demonstrated with high drive current and high on-off current ratio. Hetero-junction TFETs with scaled device geometry outperform Si FINFET at Vcc < 0.3V. Design considerations of TFET based circuits for logic applications are investigated and performance benchmarked with Si FinFET technology.

Original languageEnglish (US)
Title of host publication2013 IEEE Compound Semiconductor Integrated Circuit Symposium
Subtitle of host publicationIntegrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013
DOIs
StatePublished - Nov 8 2013
Event2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Monterey, CA, United States
Duration: Oct 13 2013Oct 16 2013

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

Other2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013
CountryUnited States
CityMonterey, CA
Period10/13/1310/16/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Datta, S., Bijesh, R., Liu, H., Mohata, D., & Narayanan, V. (2013). Tunnel transistors for low power logic. In 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013 [6659248] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2013.6659248