Tunneling through Thin Oxides—New Insights from Microscopic Calculations

M. Städele, Blair Richard Tuttle, B. Fischer, K. Hess

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si[100]-SiO2-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.

Original languageEnglish (US)
Pages (from-to)153-159
Number of pages7
JournalJournal of Computational Electronics
Volume1
Issue number1-2
DOIs
StatePublished - Jul 1 2002

Fingerprint

SiO2
Heterojunction
MOSFET
Transmission Coefficient
Oxides
Heterojunctions
Conservation
conservation
heterojunctions
Momentum
field effect transistors
Defects
momentum
Predict
oxides
Dependent
defects
coefficients
Energy
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

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Tunneling through Thin Oxides—New Insights from Microscopic Calculations. / Städele, M.; Tuttle, Blair Richard; Fischer, B.; Hess, K.

In: Journal of Computational Electronics, Vol. 1, No. 1-2, 01.07.2002, p. 153-159.

Research output: Contribution to journalArticle

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