In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO2 gate oxides using microscopic models of Si-SiO2-Si heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering