Tunneling through ultrathin SiO2 gate oxides from microscopic models

M. Städele, B. R. Tuttle, K. Hess

Research output: Contribution to journalArticle

104 Scopus citations

Abstract

We investigate theoretically coherent electron tunneling through three-dimensional microscopic Si[100]/SiO2/Si[100] model junctions with oxide thicknesses between 0.4 and 4.6 nm. The transmission probabilities of these structures were calculated using a semiempirical tight-binding scattering method. Our calculations provide a basis for the microscopic understanding of the observed independence of tunneling transmission on the orientation of the bulk silicon and on the nature of inelastic defect-assisted tunneling. We document significant differences between transmission coefficients obtained with the present scheme and with the popular effective-mass-based approaches. The energy dependence of the effective tunneling mass in bulk silicon dioxide is predicted.

Original languageEnglish (US)
Pages (from-to)348-363
Number of pages16
JournalJournal of Applied Physics
Volume89
Issue number1
DOIs
StatePublished - Jan 1 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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