Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

Joan Marie Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, W. C. Mitchel

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Abstract

High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

Original languageEnglish (US)
Pages (from-to)963-965
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number7
DOIs
StatePublished - Aug 12 1996

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electron gas
sapphire
Hall resistance
vapor phase epitaxy
Hall effect
plateaus
conduction
oscillations
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Redwing, J. M., Tischler, M. A., Flynn, J. S., Elhamri, S., Ahoujja, M., Newrock, R. S., & Mitchel, W. C. (1996). Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates. Applied Physics Letters, 69(7), 963-965. https://doi.org/10.1063/1.117096
Redwing, Joan Marie ; Tischler, M. A. ; Flynn, J. S. ; Elhamri, S. ; Ahoujja, M. ; Newrock, R. S. ; Mitchel, W. C. / Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates. In: Applied Physics Letters. 1996 ; Vol. 69, No. 7. pp. 963-965.
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Redwing, JM, Tischler, MA, Flynn, JS, Elhamri, S, Ahoujja, M, Newrock, RS & Mitchel, WC 1996, 'Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates', Applied Physics Letters, vol. 69, no. 7, pp. 963-965. https://doi.org/10.1063/1.117096

Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates. / Redwing, Joan Marie; Tischler, M. A.; Flynn, J. S.; Elhamri, S.; Ahoujja, M.; Newrock, R. S.; Mitchel, W. C.

In: Applied Physics Letters, Vol. 69, No. 7, 12.08.1996, p. 963-965.

Research output: Contribution to journalArticle

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AU - Redwing, Joan Marie

AU - Tischler, M. A.

AU - Flynn, J. S.

AU - Elhamri, S.

AU - Ahoujja, M.

AU - Newrock, R. S.

AU - Mitchel, W. C.

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AB - High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

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