Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

Joan Marie Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock, W. C. Mitchel

Research output: Contribution to journalArticlepeer-review

117 Scopus citations

Abstract

High quality Al0.15Ga0.85WGaN heterostructures have been fabricated on 6H-SiC and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A temperature independent mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. The highest low temperature 2DEG mobility, 7500 cm2/V s, was measured in AlGaN/ GaN grown on 6H-SiC; the sheet carrier density was 6×1012 cm-2. Strong, well resolved, Shubnikov-de Haas oscillations were observed in fields as low as 3 T and persisted to temperatures as high as 15 K. Hall effect measurements also revealed the presence of well-defined plateaus in the Hall resistance. The high quality 2DEG properties of the AlGaN/GaN heterostructures grown on 6H-SiC are attributed to the absence of significant parallel conduction paths in the material.

Original languageEnglish (US)
Pages (from-to)963-965
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number7
DOIs
StatePublished - Aug 12 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates'. Together they form a unique fingerprint.

Cite this