Two-dimensional hole localization induced by Zn, Ni, and Mg dopings in Cu sites in La1.85Sr0.15Cu1-xMxOy

Xu Gaojie, Mao Zhiqiang, Tian Mingliang, Wang Yu, Zhang Yuheng

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12 Scopus citations

Abstract

Samples of La1.85Sr0.15Cu1-xMxO y(M=Ni, Zn, and Mg) with a wide range of dopant concentration (0≤x≤0.30) were synthesized. X-ray diffraction analysis shows that the Zn doping results in a tetragonal-orthorhombic transition as x≥0.15, while both Ni- and Mg-doped samples still remain tetragonal up to x=0.3. Furthermore, the Ni, Zn, and Mg dopings all reduce the local Jahn-Teller distortion of the CuO6 octahedron in a similar way. The metal-insulator transition at the region of higher doping level (x>0.1) is observed in all three doped systems. The observed metal-insulator transition can be well interpreted in the context of Anderson's theory of disorder-induced localization. For most of the semiconducting-like samples with higher doping level (x>0.1), the conductive behavior is dominated by two-dimensional variable-range-hopping (2D-VRH) with ρ(T)∝e(T0/T)1/3. This suggests that all the dopings of Ni, Zn, and Mg in Cu sites cause the localization of the holes. In addition, a remarkable difference in the room-temperature resistivity for the heavily doped samples with the same dopant (Zn, Ni, Mg) concentrations is also observed. A possible explanation is provided for this phenomenon.

Original languageEnglish (US)
Pages (from-to)13-18
Number of pages6
JournalJournal of Superconductivity
Volume10
Issue number1
DOIs
StatePublished - Feb 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

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