Two-dimensional materials for low power and high frequency devices

Brian M. Bersch, Yu Chuan Lin, Kehao Zhang, Asarah M. Eichfeld, Jacob H. Leach, Robert Metzger, Keith Evans, Joshua Alexander Robinson

Research output: Contribution to journalConference article

Abstract

In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered materials to be the foundation of a new area in low power and high frequency electronics, with early reports indicating 10s of gigahertz (GHz) operation without significant optimization of parasitic resistances or capacitances. In addition, we discuss the synthesis of transition metal dichalcogenides and the integration of as-grown material into heterostructures and electronic devices. Finally, we discuss the impact of surface preparation on the integration of dielectrics with MoS2 required to achieve GHz performance.

Original languageEnglish (US)
Article number94670T
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume9467
Issue numberJanuary
DOIs
StatePublished - Jan 1 2015
Event2015 Micro- and Nanotechnology (MNT) Sensors, Systems, and Applications VII Conference - Baltimore, United States
Duration: Apr 20 2015Apr 24 2015

Fingerprint

electronics
Electronics
graphene
Graphite
Heterostructures
capacitance
transition metals
Graphene
Capacitance
preparation
optimization
Transition metals
Heterojunctions
Preparation
Electronic equipment
synthesis
Metals
Synthesis
Optimization
Resistance

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Bersch, Brian M. ; Lin, Yu Chuan ; Zhang, Kehao ; Eichfeld, Asarah M. ; Leach, Jacob H. ; Metzger, Robert ; Evans, Keith ; Robinson, Joshua Alexander. / Two-dimensional materials for low power and high frequency devices. In: Proceedings of SPIE - The International Society for Optical Engineering. 2015 ; Vol. 9467, No. January.
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Two-dimensional materials for low power and high frequency devices. / Bersch, Brian M.; Lin, Yu Chuan; Zhang, Kehao; Eichfeld, Asarah M.; Leach, Jacob H.; Metzger, Robert; Evans, Keith; Robinson, Joshua Alexander.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9467, No. January, 94670T, 01.01.2015.

Research output: Contribution to journalConference article

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AU - Bersch, Brian M.

AU - Lin, Yu Chuan

AU - Zhang, Kehao

AU - Eichfeld, Asarah M.

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AU - Metzger, Robert

AU - Evans, Keith

AU - Robinson, Joshua Alexander

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AB - In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered materials to be the foundation of a new area in low power and high frequency electronics, with early reports indicating 10s of gigahertz (GHz) operation without significant optimization of parasitic resistances or capacitances. In addition, we discuss the synthesis of transition metal dichalcogenides and the integration of as-grown material into heterostructures and electronic devices. Finally, we discuss the impact of surface preparation on the integration of dielectrics with MoS2 required to achieve GHz performance.

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