Two-dimensional tantalum disulfide: Controlling structure and properties via synthesis

Rui Zhao, Benjamin Grisafe, Ram Krishna Ghosh, Stephen Holoviak, Baoming Wang, Ke Wang, Natalie Briggs, Aman Haque, Suman Datta, Joshua Robinson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 μm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Original languageEnglish (US)
Article number025001
Journal2D Materials
Volume5
Issue number2
DOIs
StatePublished - Jan 2 2018

Fingerprint

Tantalum
disulfides
tantalum
Disulfides
Electronic properties
Transition metals
synthesis
Phase transitions
electronics
Vapor deposition
Graphite
Aluminum Oxide
transition metals
Sapphire
Powders
Graphene
Demonstrations
Metals
Modulation
Single crystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhao, Rui ; Grisafe, Benjamin ; Ghosh, Ram Krishna ; Holoviak, Stephen ; Wang, Baoming ; Wang, Ke ; Briggs, Natalie ; Haque, Aman ; Datta, Suman ; Robinson, Joshua. / Two-dimensional tantalum disulfide : Controlling structure and properties via synthesis. In: 2D Materials. 2018 ; Vol. 5, No. 2.
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Two-dimensional tantalum disulfide : Controlling structure and properties via synthesis. / Zhao, Rui; Grisafe, Benjamin; Ghosh, Ram Krishna; Holoviak, Stephen; Wang, Baoming; Wang, Ke; Briggs, Natalie; Haque, Aman; Datta, Suman; Robinson, Joshua.

In: 2D Materials, Vol. 5, No. 2, 025001, 02.01.2018.

Research output: Contribution to journalArticle

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T2 - Controlling structure and properties via synthesis

AU - Zhao, Rui

AU - Grisafe, Benjamin

AU - Ghosh, Ram Krishna

AU - Holoviak, Stephen

AU - Wang, Baoming

AU - Wang, Ke

AU - Briggs, Natalie

AU - Haque, Aman

AU - Datta, Suman

AU - Robinson, Joshua

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