Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

M. K. Hudait, Y. Zhu, S. W. Johnston, D. Maurya, S. Priya, R. Umbel

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Abstract

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellösung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 μm GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 μs were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Original languageEnglish (US)
Article number093119
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
StatePublished - Mar 4 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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