Ultra Low energy binary decision diagram circuits using few electron transistors

Vinay Saripalli, Vijay Narayanan, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Novel medical applications involving embedded sensors, require ultra low energy dissipation with low-to-moderate performance (10kHz-100MHz) driving the conventional MOSFETs into sub-threshold operation regime. In this paper, we present an alternate ultra-low power computing architecture using Binary Decision Diagram based logic circuits implemented using Single Electron Transistors (SETs) operating in the Coulomb blockade regime with very low supply voltages. We evaluate the energy - performance tradeoff metrics of such BDD circuits using time domain Monte Carlo simulations and compare them with the energy-optimized CMOS logic circuits. Simulation results show that the proposed approach achieves better energy-delay characteristics than CMOS realizations.

Original languageEnglish (US)
Title of host publicationNano-Net - 4th International ICST Conference, Nano-Net 2009, Proceedings
Pages200-209
Number of pages10
DOIs
StatePublished - Dec 1 2009
Event4th International ICST Conference on Nano-Net, Nano-Net 2009 - Lucerne, Switzerland
Duration: Oct 18 2009Oct 20 2009

Publication series

NameLecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering
Volume20 LNICST
ISSN (Print)1867-8211

Other

Other4th International ICST Conference on Nano-Net, Nano-Net 2009
CountrySwitzerland
CityLucerne
Period10/18/0910/20/09

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications

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    Saripalli, V., Narayanan, V., & Datta, S. (2009). Ultra Low energy binary decision diagram circuits using few electron transistors. In Nano-Net - 4th International ICST Conference, Nano-Net 2009, Proceedings (pp. 200-209). (Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering; Vol. 20 LNICST). https://doi.org/10.1007/978-3-642-04850-0_27