Ultra-Low Power 3D NC-FinFET-based Monolithic 3D + -IC with Computing-in-Memory for Intelligent IoT Devices

Fu Kuo Hsueh, Wei Hao Chen, Kai Shin Li, Chang Hong Shen, Jia Min Shieh, Chun Ying Lee, Bo Yuan Chen, Hsiu Chih Chen, Chih Chao Yang, Wen Hsien Huang, Kun Ming Chen, Guo Wei Huang, Peng Chen, Yung Ning Tu, Srivatsa Srinivasa, Vijaykrishnan Narayanan, Meng Fan Chang, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

For the first time, ultra-low power ferroelectric FinFET-based monolithic 3D + -IC technology was demonstrated for near memory computing (NMC) circuit. Key enablers are ICP-SiO 2 interfacial layer, doped hafnia ferroelectric gate dielectric layer (HfZrO 2 ), and far-infrared laser activation. The proposed stackable 3D NC-FinFETs thus fabricated exhibit record-low sub-threshold swing (NC-nFinFET: 45mV/dec and NC-pFinFET: 50mV/dec) and high I on /I off (>10 6 ) that enable ultra-low power operation ( V DD=100 mV) of CMOS inverter and SRAM. Moreover, above mentioned features of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry.

Original languageEnglish (US)
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.1.1-15.1.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - Jan 16 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: Dec 1 2018Dec 5 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period12/1/1812/5/18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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