Ultra low temperature poly-crystalline silicon thin film transistors on flexible pet substrates for display applications

Sara Paydavosi, Seyedehaida Ebrahimi, Shams Mohajerzadeh, Ashkan Behnam, Zeinab Sanaie, M. D. Robertson

Research output: Contribution to journalConference article

Abstract

Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.

Original languageEnglish (US)
Pages (from-to)112-115
Number of pages4
JournalSID Conference Record of the International Display Research Conference
StatePublished - Dec 1 2006
EventSID 26th International Display Research Conference - Kent, OH, United States
Duration: Sep 18 2006Sep 21 2006

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Thin film transistors
Crystallization
Electron mobility
Display devices
Crystalline materials
Silicon
Substrates
Temperature
Hydrogenation
Annealing
Plastics
Plasmas
Metals

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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abstract = "Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.",
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Ultra low temperature poly-crystalline silicon thin film transistors on flexible pet substrates for display applications. / Paydavosi, Sara; Ebrahimi, Seyedehaida; Mohajerzadeh, Shams; Behnam, Ashkan; Sanaie, Zeinab; Robertson, M. D.

In: SID Conference Record of the International Display Research Conference, 01.12.2006, p. 112-115.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Ultra low temperature poly-crystalline silicon thin film transistors on flexible pet substrates for display applications

AU - Paydavosi, Sara

AU - Ebrahimi, Seyedehaida

AU - Mohajerzadeh, Shams

AU - Behnam, Ashkan

AU - Sanaie, Zeinab

AU - Robertson, M. D.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.

AB - Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.

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