Ultra low temperature poly-crystalline silicon thin film transistors on flexible pet substrates for display applications

Sara Paydavosi, Seyedehaida Ebrahimi, Shams Mohajerzadeh, Ashkan Behnam, Zeinab Sanaie, M. D. Robertson

Research output: Contribution to journalConference articlepeer-review

Abstract

Low temperature nano-crystallization of silicon films on PET substrates have been achieved using external mechanical stress applied by bending the specimen inwards. A sequence of RF-plasma hydrogenation and annealing is required to achieve crystallization at temperatures below 150°C, suitable for plastic substrates. In addition, a low-temperature stress-stimulated metal-induced lateral crystallization has been devised in order to improve the crystalline quality of the layer as well as enhancing the on/off ratio and electron mobility of the thin film transistors. An on/off ratio of 2000 and an electron mobility of 8-10 cm2/Vs have been obtained.

Original languageEnglish (US)
Pages (from-to)112-115
Number of pages4
JournalSID Conference Record of the International Display Research Conference
StatePublished - Dec 1 2006
EventSID 26th International Display Research Conference - Kent, OH, United States
Duration: Sep 18 2006Sep 21 2006

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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