TY - JOUR
T1 - Ultra-smooth and ultra-strong ion-exchanged glass as substrates for organic electronics
AU - Käfer, Daniel
AU - He, Mingqian
AU - Li, Jianfeng
AU - Pambianchi, Michael S.
AU - Feng, Jiangwei
AU - Mauro, John C.
AU - Bao, Zhenan
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013/7/5
Y1 - 2013/7/5
N2 - The introduction of new substrate materials into the world of electronics has previously opened up new possibilities for novel applications and device designs. Here, the use of ion-exchanged sodium aluminosilicate (NAS) glass is presented as a new type of substrate that is not only highly damage resistant, but also allows the fabrication of high performance organic electronic devices. The smoothness of the NAS glass surface enables favorable growth of the semiconductor layer, enabling high charge carrier mobilities for typical organic semiconductors, such as pentacene or C60, and a polymer semiconductor. No degradation of the device performance is observed as a result of ion migration into the active device region, and no compromise in substrate strength due to the processing conditions is made. This work suggests the possibility of new, highly durable electronic devices on glass in large area format. An ion-exchanged glass is introduced as a new substrate that is not only virtually unbreakable, therefore overcoming the brittleness that Si wafers possess, but also allows fabrication of high performance organic electronic devices. The smoothness of the surface of this fusion-drawn glass enables favorable large grain growth of the semiconductor, enabling high charge carrier mobilities of all kinds of organic semiconductors, such as pentacene or C60.
AB - The introduction of new substrate materials into the world of electronics has previously opened up new possibilities for novel applications and device designs. Here, the use of ion-exchanged sodium aluminosilicate (NAS) glass is presented as a new type of substrate that is not only highly damage resistant, but also allows the fabrication of high performance organic electronic devices. The smoothness of the NAS glass surface enables favorable growth of the semiconductor layer, enabling high charge carrier mobilities for typical organic semiconductors, such as pentacene or C60, and a polymer semiconductor. No degradation of the device performance is observed as a result of ion migration into the active device region, and no compromise in substrate strength due to the processing conditions is made. This work suggests the possibility of new, highly durable electronic devices on glass in large area format. An ion-exchanged glass is introduced as a new substrate that is not only virtually unbreakable, therefore overcoming the brittleness that Si wafers possess, but also allows fabrication of high performance organic electronic devices. The smoothness of the surface of this fusion-drawn glass enables favorable large grain growth of the semiconductor, enabling high charge carrier mobilities of all kinds of organic semiconductors, such as pentacene or C60.
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U2 - 10.1002/adfm.201202009
DO - 10.1002/adfm.201202009
M3 - Article
AN - SCOPUS:84879204368
VL - 23
SP - 3233
EP - 3238
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 25
ER -