TY - JOUR
T1 - Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
AU - Ding, Peng
AU - Chen, Chen
AU - Ding, Wuchang
AU - Yang, Feng
AU - Su, Yongbo
AU - Wang, Dahai
AU - Jin, Zhi
N1 - Funding Information:
This work was financially supported by the National Natural Science Foundation of China (NSFC) under Grant No. 61434006 .
Publisher Copyright:
© 2016 Published by Elsevier Ltd.
PY - 2016/9/1
Y1 - 2016/9/1
N2 - Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs.
AB - Surface passivation in InP-based High Electron Mobility Transistors (HEMTs) plays an important role in reducing or eliminating their surface effects which limit both direct-current (DC) and radio-frequency (RF) performances. In the present work, effect of surface passivation was studied using an ultra-thin 20 nm PECVD Si3N4 layer. In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm. It is found that, by scaling the thickness of Si3N4 layer, the increase in Cgd after passivation can be effectively limited verified by small-signal modeling. As a result, S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation. The results show that, by using an ultra-thin Si3N4 surface passivation, its RF performance can be improved in InP-based HEMTs.
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U2 - 10.1016/j.sse.2016.05.011
DO - 10.1016/j.sse.2016.05.011
M3 - Article
AN - SCOPUS:84971268666
SN - 0038-1101
VL - 123
SP - 1
EP - 5
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -