Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance

Peng Ding, Chen Chen, Wuchang Ding, Feng Yang, Yongbo Su, Dahai Wang, Zhi Jin

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

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