Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals

Matthew R. Bergren, Chito E. Kendrick, Nathan R. Neale, Joan Marie Redwing, Reuben T. Collins, Thomas E. Furtak, Matthew C. Beard

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We simultaneously determined the charge carrier mobility and picosecond to nanosecond carrier dynamics of isolated silicon nanowires (Si NWs) and nanocrystals (Si NCs) using time-resolved terahertz spectroscopy. We then compared these results to data measured on bulk c-Si as a function of excitation fluence. We find >1 ns carrier lifetimes in Si NWs that are dominated by surface recombination with surface recombination velocities (SRV) between ∼1100-1700 cm s -1 depending on process conditions. The Si NCs have markedly different decay dynamics. Initially, free-carriers are produced, but relax within ∼1.5 ps to form bound excitons. Subsequently, the excitons decay with lifetimes >7 ns, similar to free carriers produced in bulk Si. The isolated Si NWs exhibit bulk-like mobilities that decrease with increasing excitation density, while the hot-carrier mobilities in the Si NCs are lower than bulk mobilities and could only be measured within the initial 1.5 ps decay. We discuss the implications of our measurements on the utilization of Si NWs and NCs in macroscopic optoelectronic applications.

Original languageEnglish (US)
Pages (from-to)2050-2057
Number of pages8
JournalJournal of Physical Chemistry Letters
Volume5
Issue number12
DOIs
StatePublished - Jun 19 2014

Fingerprint

Silicon
Nanocrystals
electrical measurement
Nanowires
nanocrystals
nanowires
Carrier mobility
silicon
carrier mobility
Excitons
decay
excitons
Terahertz spectroscopy
Hot carriers
Carrier lifetime
carrier lifetime
Charge carriers
Optoelectronic devices
excitation
charge carriers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physical and Theoretical Chemistry

Cite this

Bergren, M. R., Kendrick, C. E., Neale, N. R., Redwing, J. M., Collins, R. T., Furtak, T. E., & Beard, M. C. (2014). Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals. Journal of Physical Chemistry Letters, 5(12), 2050-2057. https://doi.org/10.1021/jz500863a
Bergren, Matthew R. ; Kendrick, Chito E. ; Neale, Nathan R. ; Redwing, Joan Marie ; Collins, Reuben T. ; Furtak, Thomas E. ; Beard, Matthew C. / Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals. In: Journal of Physical Chemistry Letters. 2014 ; Vol. 5, No. 12. pp. 2050-2057.
@article{d14a669ca7ca4a67ba730cac41502fbd,
title = "Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals",
abstract = "We simultaneously determined the charge carrier mobility and picosecond to nanosecond carrier dynamics of isolated silicon nanowires (Si NWs) and nanocrystals (Si NCs) using time-resolved terahertz spectroscopy. We then compared these results to data measured on bulk c-Si as a function of excitation fluence. We find >1 ns carrier lifetimes in Si NWs that are dominated by surface recombination with surface recombination velocities (SRV) between ∼1100-1700 cm s -1 depending on process conditions. The Si NCs have markedly different decay dynamics. Initially, free-carriers are produced, but relax within ∼1.5 ps to form bound excitons. Subsequently, the excitons decay with lifetimes >7 ns, similar to free carriers produced in bulk Si. The isolated Si NWs exhibit bulk-like mobilities that decrease with increasing excitation density, while the hot-carrier mobilities in the Si NCs are lower than bulk mobilities and could only be measured within the initial 1.5 ps decay. We discuss the implications of our measurements on the utilization of Si NWs and NCs in macroscopic optoelectronic applications.",
author = "Bergren, {Matthew R.} and Kendrick, {Chito E.} and Neale, {Nathan R.} and Redwing, {Joan Marie} and Collins, {Reuben T.} and Furtak, {Thomas E.} and Beard, {Matthew C.}",
year = "2014",
month = "6",
day = "19",
doi = "10.1021/jz500863a",
language = "English (US)",
volume = "5",
pages = "2050--2057",
journal = "Journal of Physical Chemistry Letters",
issn = "1948-7185",
publisher = "American Chemical Society",
number = "12",

}

Bergren, MR, Kendrick, CE, Neale, NR, Redwing, JM, Collins, RT, Furtak, TE & Beard, MC 2014, 'Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals', Journal of Physical Chemistry Letters, vol. 5, no. 12, pp. 2050-2057. https://doi.org/10.1021/jz500863a

Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals. / Bergren, Matthew R.; Kendrick, Chito E.; Neale, Nathan R.; Redwing, Joan Marie; Collins, Reuben T.; Furtak, Thomas E.; Beard, Matthew C.

In: Journal of Physical Chemistry Letters, Vol. 5, No. 12, 19.06.2014, p. 2050-2057.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultrafast electrical measurements of isolated silicon nanowires and nanocrystals

AU - Bergren, Matthew R.

AU - Kendrick, Chito E.

AU - Neale, Nathan R.

AU - Redwing, Joan Marie

AU - Collins, Reuben T.

AU - Furtak, Thomas E.

AU - Beard, Matthew C.

PY - 2014/6/19

Y1 - 2014/6/19

N2 - We simultaneously determined the charge carrier mobility and picosecond to nanosecond carrier dynamics of isolated silicon nanowires (Si NWs) and nanocrystals (Si NCs) using time-resolved terahertz spectroscopy. We then compared these results to data measured on bulk c-Si as a function of excitation fluence. We find >1 ns carrier lifetimes in Si NWs that are dominated by surface recombination with surface recombination velocities (SRV) between ∼1100-1700 cm s -1 depending on process conditions. The Si NCs have markedly different decay dynamics. Initially, free-carriers are produced, but relax within ∼1.5 ps to form bound excitons. Subsequently, the excitons decay with lifetimes >7 ns, similar to free carriers produced in bulk Si. The isolated Si NWs exhibit bulk-like mobilities that decrease with increasing excitation density, while the hot-carrier mobilities in the Si NCs are lower than bulk mobilities and could only be measured within the initial 1.5 ps decay. We discuss the implications of our measurements on the utilization of Si NWs and NCs in macroscopic optoelectronic applications.

AB - We simultaneously determined the charge carrier mobility and picosecond to nanosecond carrier dynamics of isolated silicon nanowires (Si NWs) and nanocrystals (Si NCs) using time-resolved terahertz spectroscopy. We then compared these results to data measured on bulk c-Si as a function of excitation fluence. We find >1 ns carrier lifetimes in Si NWs that are dominated by surface recombination with surface recombination velocities (SRV) between ∼1100-1700 cm s -1 depending on process conditions. The Si NCs have markedly different decay dynamics. Initially, free-carriers are produced, but relax within ∼1.5 ps to form bound excitons. Subsequently, the excitons decay with lifetimes >7 ns, similar to free carriers produced in bulk Si. The isolated Si NWs exhibit bulk-like mobilities that decrease with increasing excitation density, while the hot-carrier mobilities in the Si NCs are lower than bulk mobilities and could only be measured within the initial 1.5 ps decay. We discuss the implications of our measurements on the utilization of Si NWs and NCs in macroscopic optoelectronic applications.

UR - http://www.scopus.com/inward/record.url?scp=84903126840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903126840&partnerID=8YFLogxK

U2 - 10.1021/jz500863a

DO - 10.1021/jz500863a

M3 - Article

AN - SCOPUS:84903126840

VL - 5

SP - 2050

EP - 2057

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 12

ER -