Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation

S. Ashok, Y. G. Wang, O. S. Nakagawa

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

Original languageEnglish (US)
Pages (from-to)1560-1562
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number15
DOIs
StatePublished - Dec 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation'. Together they form a unique fingerprint.

Cite this