GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)