Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

W. Walecki, W. R. Patterson, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, M. Kobayashi, S. Durbin, R. L. Gunshor

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We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors.<hedend>.

Original languageEnglish (US)
Pages (from-to)2641-2643
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - Dec 1 1990

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