Ultraviolet radiation effects on paramagnetic defects in low- κ dielectrics for ultralarge scale integrated circuit interconnects

B. C. Bittel, Patrick M. Lenahan, S. W. King

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The electronic properties of low- κ interlayer dielectric and etch stop layers are important issues in ultralarge scale integrated circuits development. Leakage currents are critical problems that are not well understood. A topic of current interest is ultraviolet curing of these films. We report on electron spin resonance and electrical measurements of low- κ films with and without ultraviolet exposure. This work provides fundamental understanding of the deep level defects likely involved in leakage currents.

Original languageEnglish (US)
Article number063506
JournalApplied Physics Letters
Volume97
Issue number6
DOIs
StatePublished - Aug 9 2010

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radiation effects
ultraviolet radiation
integrated circuits
leakage
defects
curing
electrical measurement
interlayers
critical current
electron paramagnetic resonance
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Ultraviolet radiation effects on paramagnetic defects in low- κ dielectrics for ultralarge scale integrated circuit interconnects. / Bittel, B. C.; Lenahan, Patrick M.; King, S. W.

In: Applied Physics Letters, Vol. 97, No. 6, 063506, 09.08.2010.

Research output: Contribution to journalArticle

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