Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy

Li Ding, Muhammad Shoufie Ukhtary, Mikhail Chubarov, Tanushree H. Choudhury, Fu Zhang, Rui Yang, Ao Zhang, Jonathan A. Fan, Mauricio Terrones, Joan M. Redwing, Teng Yang, Mingda Li, Riichiro Saito, Shengxi Huang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm-1. Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm-1. Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm-1 mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Waals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.

Original languageEnglish (US)
Article number8409293
Pages (from-to)4059-4067
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume65
Issue number10
DOIs
StatePublished - Oct 2018

Fingerprint

Boron nitride
Transition metals
Raman spectroscopy
Heterojunctions
Gold
Tungsten
Substrates
Hybrid systems
Shearing
Disulfides
Raman scattering
Monolayers
Tuning
boron nitride
Computer simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ding, Li ; Ukhtary, Muhammad Shoufie ; Chubarov, Mikhail ; Choudhury, Tanushree H. ; Zhang, Fu ; Yang, Rui ; Zhang, Ao ; Fan, Jonathan A. ; Terrones, Mauricio ; Redwing, Joan M. ; Yang, Teng ; Li, Mingda ; Saito, Riichiro ; Huang, Shengxi. / Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy. In: IEEE Transactions on Electron Devices. 2018 ; Vol. 65, No. 10. pp. 4059-4067.
@article{715b6ae7fca541ac9e00a19c570913d1,
title = "Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy",
abstract = "In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm-1. Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm-1. Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm-1 mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Waals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.",
author = "Li Ding and Ukhtary, {Muhammad Shoufie} and Mikhail Chubarov and Choudhury, {Tanushree H.} and Fu Zhang and Rui Yang and Ao Zhang and Fan, {Jonathan A.} and Mauricio Terrones and Redwing, {Joan M.} and Teng Yang and Mingda Li and Riichiro Saito and Shengxi Huang",
year = "2018",
month = "10",
doi = "10.1109/TED.2018.2847230",
language = "English (US)",
volume = "65",
pages = "4059--4067",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

Ding, L, Ukhtary, MS, Chubarov, M, Choudhury, TH, Zhang, F, Yang, R, Zhang, A, Fan, JA, Terrones, M, Redwing, JM, Yang, T, Li, M, Saito, R & Huang, S 2018, 'Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy', IEEE Transactions on Electron Devices, vol. 65, no. 10, 8409293, pp. 4059-4067. https://doi.org/10.1109/TED.2018.2847230

Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy. / Ding, Li; Ukhtary, Muhammad Shoufie; Chubarov, Mikhail; Choudhury, Tanushree H.; Zhang, Fu; Yang, Rui; Zhang, Ao; Fan, Jonathan A.; Terrones, Mauricio; Redwing, Joan M.; Yang, Teng; Li, Mingda; Saito, Riichiro; Huang, Shengxi.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 10, 8409293, 10.2018, p. 4059-4067.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy

AU - Ding, Li

AU - Ukhtary, Muhammad Shoufie

AU - Chubarov, Mikhail

AU - Choudhury, Tanushree H.

AU - Zhang, Fu

AU - Yang, Rui

AU - Zhang, Ao

AU - Fan, Jonathan A.

AU - Terrones, Mauricio

AU - Redwing, Joan M.

AU - Yang, Teng

AU - Li, Mingda

AU - Saito, Riichiro

AU - Huang, Shengxi

PY - 2018/10

Y1 - 2018/10

N2 - In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm-1. Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm-1. Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm-1 mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Waals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.

AB - In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on gold film at low- and high-frequency ranges by Raman spectroscopy. Nineteen Raman modes have been observed from the sample, including a new interlayer coupling mode at 28.8 cm-1. Compared to reported experimental results of tungsten disulfide (WS2) on SiO2/Si substrates, the Raman spectrum for WS2 on hBN/Au emerges a blue shift of about 8 cm-1. Furthermore, a remarkable enhancement of Raman intensity can be obtained when tuning hBN thickness in the heterostructure. Through systematic first-principles calculations, numerical simulations, and analytical calculations, we find that the 28.8 cm-1 mode originates from the shearing motion between monolayer TMD and hBN layers. In addition, the gold substrate and hBN layers form an optical cavity and the cavity interference effects enhance the obtained Raman intensity. This paper demonstrates the novel vibrational modes of 2-D van der Waals heterostructure as an effective tool to characterize a variety of such heterostructures and reveals a new method to enhance the Raman response of 2-D materials.

UR - http://www.scopus.com/inward/record.url?scp=85049792725&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049792725&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2847230

DO - 10.1109/TED.2018.2847230

M3 - Article

AN - SCOPUS:85049792725

VL - 65

SP - 4059

EP - 4067

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

M1 - 8409293

ER -