Undoped SiGe heterostructure field effect transistors

Thomas Nelson Jackson, S. F. Nelson, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalConference article

Original languageEnglish (US)
Article number1009629
JournalDevice Research Conference - Conference Digest, DRC
VolumePart F146191
DOIs
StatePublished - Jan 1 1993
Event51st Annual Device Research Conference, DRC 1993 - Santa Barbara, United States
Duration: Jun 21 1993Jun 23 1993

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High electron mobility transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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title = "Undoped SiGe heterostructure field effect transistors",
author = "Jackson, {Thomas Nelson} and Nelson, {S. F.} and Chu, {J. O.} and Meyerson, {B. S.}",
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Undoped SiGe heterostructure field effect transistors. / Jackson, Thomas Nelson; Nelson, S. F.; Chu, J. O.; Meyerson, B. S.

In: Device Research Conference - Conference Digest, DRC, Vol. Part F146191, 1009629, 01.01.1993.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Meyerson, B. S.

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