Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Chito Kendrick, Meng Wei Kuo, Jie Li, Haoting Shen, Theresa S. Mayer, Joan M. Redwing

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Abstract

Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/- 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/- 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.

Original languageEnglish (US)
Article number235101
JournalJournal of Applied Physics
Volume122
Issue number23
DOIs
StatePublished - Dec 21 2017

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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