Unipolar resistive switching of Au+-implanted ZrO2 films

Qi Liu, Shibing Long, Weihua Guan, Sen Zhang, Ming Liu, Junning Chen

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The resistive switching characteristics of Au+-implanted ZrO2 films are investigated. The Au/Cr/Au+-implanted- ZrO2/n+-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au+-implanted- ZrO2/n+-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

Original languageEnglish (US)
Article number042001
JournalJournal of Semiconductors
Volume30
Issue number4
DOIs
StatePublished - Dec 1 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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