Universal description of channel conductivity for nanotube and nanowire transistors

S. V. Rotkin, H. E. Ruda, A. Shik

Research output: Contribution to journalArticle

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Abstract

A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.

Original languageEnglish (US)
Pages (from-to)1623-1625
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
Publication statusPublished - Aug 25 2003

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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