Universal description of channel conductivity for nanotube and nanowire transistors

Vyacheslav Rotkin, H. E. Ruda, A. Shik

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A theory of drift-diffusion transport in nanotube and nanowire transistors was developed. Two cases of a semiconductor nanowire and a single-wall nanotube were considered using self-consistent electrostatics to obtain a general expression for the transconductance. The results suggest that the quantum-wire channel model differ from a classical device theory because of the specific nanowire charge density distribution.

Original languageEnglish (US)
Pages (from-to)1623-1625
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number8
DOIs
StatePublished - Aug 25 2003

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nanotubes
nanowires
transistors
conductivity
transconductance
quantum wires
density distribution
electrostatics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Universal description of channel conductivity for nanotube and nanowire transistors. / Rotkin, Vyacheslav; Ruda, H. E.; Shik, A.

In: Applied Physics Letters, Vol. 83, No. 8, 25.08.2003, p. 1623-1625.

Research output: Contribution to journalArticle

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