Unraveling deterministic mesoscopic polarization switching mechanisms: spatially resolved studies of a tilt grain boundary in bismuth ferrite

Brian J. Rodriguez, Samrat Choudhury, Y. H. Chu, Abhishek Bhattacharyya, Stephen Jesse, Katyayani Seal, Arthur P. Baddorf, R. Ramesh, Long-qing Chen, Sergei V. Kalinin

Research output: Contribution to journalArticle

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Abstract

The deterministic mesoscopic mechanism of ferroelectric domain nucleation is probed at a single atomically-defined model defect: an artificially fabricated bicrystal grain boundary (GB) in an epitaxial bismuth ferrite film. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is used to map the variation of local hysteresis loops at the GB and in its immediate vicinity. It is found that the the influence of the GB on nucleation results in a slight shift of the negative nucleation bias to larger voltages. The mesoscopic mechanisms of domain nucleation in the bulk and at the GB are studied in detail using phase-field modeling, elucidating the complex mechanisms governed by the interplay between ferroelectric and ferroelastic wall energies, depolarization fields, and interface charge. The combination of phase-field modeling and SS-PFM allows quantitative analysis of the mesoscopic mechanisms for polarization switching, and hence suggests a route for unraveling the mechanisms of polarization switching at a single defect level and ultimately optimizing materials properties through microstructure engineering.

Original languageEnglish (US)
Pages (from-to)2053-2063
Number of pages11
JournalAdvanced Functional Materials
Volume19
Issue number13
DOIs
StatePublished - Jul 10 2009

Fingerprint

Bismuth
bismuth
Ferrite
ferrites
Grain boundaries
Nucleation
grain boundaries
Polarization
nucleation
polarization
Ferroelectric materials
Microscopic examination
Spectroscopy
Bicrystals
Defects
Depolarization
microscopy
Hysteresis loops
bicrystals
defects

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Rodriguez, Brian J. ; Choudhury, Samrat ; Chu, Y. H. ; Bhattacharyya, Abhishek ; Jesse, Stephen ; Seal, Katyayani ; Baddorf, Arthur P. ; Ramesh, R. ; Chen, Long-qing ; Kalinin, Sergei V. / Unraveling deterministic mesoscopic polarization switching mechanisms : spatially resolved studies of a tilt grain boundary in bismuth ferrite. In: Advanced Functional Materials. 2009 ; Vol. 19, No. 13. pp. 2053-2063.
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Rodriguez, BJ, Choudhury, S, Chu, YH, Bhattacharyya, A, Jesse, S, Seal, K, Baddorf, AP, Ramesh, R, Chen, L & Kalinin, SV 2009, 'Unraveling deterministic mesoscopic polarization switching mechanisms: spatially resolved studies of a tilt grain boundary in bismuth ferrite', Advanced Functional Materials, vol. 19, no. 13, pp. 2053-2063. https://doi.org/10.1002/adfm.200900100

Unraveling deterministic mesoscopic polarization switching mechanisms : spatially resolved studies of a tilt grain boundary in bismuth ferrite. / Rodriguez, Brian J.; Choudhury, Samrat; Chu, Y. H.; Bhattacharyya, Abhishek; Jesse, Stephen; Seal, Katyayani; Baddorf, Arthur P.; Ramesh, R.; Chen, Long-qing; Kalinin, Sergei V.

In: Advanced Functional Materials, Vol. 19, No. 13, 10.07.2009, p. 2053-2063.

Research output: Contribution to journalArticle

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T2 - spatially resolved studies of a tilt grain boundary in bismuth ferrite

AU - Rodriguez, Brian J.

AU - Choudhury, Samrat

AU - Chu, Y. H.

AU - Bhattacharyya, Abhishek

AU - Jesse, Stephen

AU - Seal, Katyayani

AU - Baddorf, Arthur P.

AU - Ramesh, R.

AU - Chen, Long-qing

AU - Kalinin, Sergei V.

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Y1 - 2009/7/10

N2 - The deterministic mesoscopic mechanism of ferroelectric domain nucleation is probed at a single atomically-defined model defect: an artificially fabricated bicrystal grain boundary (GB) in an epitaxial bismuth ferrite film. Switching spectroscopy piezoresponse force microscopy (SS-PFM) is used to map the variation of local hysteresis loops at the GB and in its immediate vicinity. It is found that the the influence of the GB on nucleation results in a slight shift of the negative nucleation bias to larger voltages. The mesoscopic mechanisms of domain nucleation in the bulk and at the GB are studied in detail using phase-field modeling, elucidating the complex mechanisms governed by the interplay between ferroelectric and ferroelastic wall energies, depolarization fields, and interface charge. The combination of phase-field modeling and SS-PFM allows quantitative analysis of the mesoscopic mechanisms for polarization switching, and hence suggests a route for unraveling the mechanisms of polarization switching at a single defect level and ultimately optimizing materials properties through microstructure engineering.

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