Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, Jun Zhu

Research output: Contribution to journalArticle

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Abstract

We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

Original languageEnglish (US)
Article number033114
JournalApplied Physics Letters
Volume97
Issue number3
DOIs
StatePublished - Jul 19 2010

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graphene
field effect transistors
hysteresis
metastable state
time constant
high voltages
activation
dissociation
electric potential
polarization
thin films
water
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have fabricated n -layer graphene field effect transistors on epitaxial ferroelectric Pb (Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high- κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.",
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Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. / Hong, X.; Hoffman, J.; Posadas, A.; Zou, K.; Ahn, C. H.; Zhu, Jun.

In: Applied Physics Letters, Vol. 97, No. 3, 033114, 19.07.2010.

Research output: Contribution to journalArticle

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AU - Hong, X.

AU - Hoffman, J.

AU - Posadas, A.

AU - Zou, K.

AU - Ahn, C. H.

AU - Zhu, Jun

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