V-Gate GaN HEMTs for X-Band power applications

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The combination of these two technologies enables high-voltage and dispersion-free operation without significantly sacrificing the devices' bandwidth. At 10-GHz frequency and 48-V drain bias, the V-gate devices exhibited an output power density of 12.2 W/mm with the associated power added efficiency as high as 65%. This result represents, to date, the highest reported efficiency at this frequency and operating voltage, indicating that the V-gate GaN HEMTs are suitable for X-band power applications.

Original languageEnglish (US)
Pages (from-to)974-976
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
StatePublished - Sep 5 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'V-Gate GaN HEMTs for X-Band power applications'. Together they form a unique fingerprint.

  • Cite this

    Chu, R., Shen, L., Fichtenbaum, N., Brown, D., Chen, Z., Keller, S., DenBaars, S. P., & Mishra, U. K. (2008). V-Gate GaN HEMTs for X-Band power applications. IEEE Electron Device Letters, 29(9), 974-976. https://doi.org/10.1109/LED.2008.2001639