V-Gate GaN HEMTs for X-Band power applications

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

GaN high electron mobility transistors (HEMTs) with novel V-shaped gates were developed. The V-gate GaN HEMTs feature two key technologies: One is the use of an epitaxially grown GaN cap layer to isolate the surface charging from affecting the 2DEG channel; the other one is the adoption of a V-shaped gate-recess geometry that effectively mitigates the electric-field crowding at the gate edge. The combination of these two technologies enables high-voltage and dispersion-free operation without significantly sacrificing the devices' bandwidth. At 10-GHz frequency and 48-V drain bias, the V-gate devices exhibited an output power density of 12.2 W/mm with the associated power added efficiency as high as 65%. This result represents, to date, the highest reported efficiency at this frequency and operating voltage, indicating that the V-gate GaN HEMTs are suitable for X-band power applications.

Original languageEnglish (US)
Pages (from-to)974-976
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
StatePublished - Sep 5 2008

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High electron mobility transistors
Two dimensional electron gas
Electric potential
Electric fields
Bandwidth
Geometry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chu, R., Shen, L., Fichtenbaum, N., Brown, D., Chen, Z., Keller, S., ... Mishra, U. K. (2008). V-Gate GaN HEMTs for X-Band power applications. IEEE Electron Device Letters, 29(9), 974-976. https://doi.org/10.1109/LED.2008.2001639
Chu, Rongming ; Shen, Likun ; Fichtenbaum, Nicholas ; Brown, David ; Chen, Zhen ; Keller, Stacia ; DenBaars, Steven P. ; Mishra, Umesh K. / V-Gate GaN HEMTs for X-Band power applications. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 9. pp. 974-976.
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Chu, R, Shen, L, Fichtenbaum, N, Brown, D, Chen, Z, Keller, S, DenBaars, SP & Mishra, UK 2008, 'V-Gate GaN HEMTs for X-Band power applications', IEEE Electron Device Letters, vol. 29, no. 9, pp. 974-976. https://doi.org/10.1109/LED.2008.2001639

V-Gate GaN HEMTs for X-Band power applications. / Chu, Rongming; Shen, Likun; Fichtenbaum, Nicholas; Brown, David; Chen, Zhen; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 29, No. 9, 05.09.2008, p. 974-976.

Research output: Contribution to journalArticle

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Chu R, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S et al. V-Gate GaN HEMTs for X-Band power applications. IEEE Electron Device Letters. 2008 Sep 5;29(9):974-976. https://doi.org/10.1109/LED.2008.2001639