V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Umesh Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages205-206
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

Fingerprint

High electron mobility transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chu, R., Shen, L., Fichtenbaum, N., Brown, D., Chen, Z., Keller, S., & Mishra, U. (2008). V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 205-206). [4800804] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800804
Chu, Rongming ; Shen, Likun ; Fichtenbaum, Nicholas ; Brown, David ; Chen, Zhen ; Keller, Stacia ; Mishra, Umesh. / V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. 66th DRC Device Research Conference Digest, DRC 2008. 2008. pp. 205-206 (Device Research Conference - Conference Digest, DRC).
@inproceedings{f8cf37fec57a4ddca8955d39d4031562,
title = "V-gate GaN HEMTs with 12.2 W/mm and 65{\%} PAE at X-band",
author = "Rongming Chu and Likun Shen and Nicholas Fichtenbaum and David Brown and Zhen Chen and Stacia Keller and Umesh Mishra",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/DRC.2008.4800804",
language = "English (US)",
isbn = "9781424419425",
series = "Device Research Conference - Conference Digest, DRC",
pages = "205--206",
booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

}

Chu, R, Shen, L, Fichtenbaum, N, Brown, D, Chen, Z, Keller, S & Mishra, U 2008, V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. in 66th DRC Device Research Conference Digest, DRC 2008., 4800804, Device Research Conference - Conference Digest, DRC, pp. 205-206, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800804

V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. / Chu, Rongming; Shen, Likun; Fichtenbaum, Nicholas; Brown, David; Chen, Zhen; Keller, Stacia; Mishra, Umesh.

66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 205-206 4800804 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

AU - Chu, Rongming

AU - Shen, Likun

AU - Fichtenbaum, Nicholas

AU - Brown, David

AU - Chen, Zhen

AU - Keller, Stacia

AU - Mishra, Umesh

PY - 2008/12/1

Y1 - 2008/12/1

UR - http://www.scopus.com/inward/record.url?scp=64849086684&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64849086684&partnerID=8YFLogxK

U2 - 10.1109/DRC.2008.4800804

DO - 10.1109/DRC.2008.4800804

M3 - Conference contribution

AN - SCOPUS:64849086684

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 205

EP - 206

BT - 66th DRC Device Research Conference Digest, DRC 2008

ER -

Chu R, Shen L, Fichtenbaum N, Brown D, Chen Z, Keller S et al. V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. In 66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 205-206. 4800804. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800804