V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Umesh Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages205-206
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chu, R., Shen, L., Fichtenbaum, N., Brown, D., Chen, Z., Keller, S., & Mishra, U. (2008). V-gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-band. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 205-206). [4800804] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800804