V-Gate GaN HEMTs with engineered buffer for normally off operation

Rongming Chu, Zhen Chen, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We propose and demonstrate V-gate GaN high electron mobility transistors (HEMTs) with engineered buffers for normally off operation. By incorporating an AlGaN buffer under the GaN channel, net negative polarization charges are generated under the channel. These negative charges shift the threshold voltage of the GaN HEMT toward positive and therefore favor the realization of normally off operation. Using the engineered-buffer design coupled with our deep-recess V-gate structure, true normally off operation with reduced dc-RF dispersion was achieved.

Original languageEnglish (US)
Pages (from-to)1184-1186
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number11
DOIs
StatePublished - Sep 30 2008

Fingerprint

High electron mobility transistors
Buffers
Threshold voltage
Polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chu, Rongming ; Chen, Zhen ; DenBaars, Steven P. ; Mishra, Umesh K. / V-Gate GaN HEMTs with engineered buffer for normally off operation. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 11. pp. 1184-1186.
@article{1cce32783e194886a228a6134ff20625,
title = "V-Gate GaN HEMTs with engineered buffer for normally off operation",
abstract = "We propose and demonstrate V-gate GaN high electron mobility transistors (HEMTs) with engineered buffers for normally off operation. By incorporating an AlGaN buffer under the GaN channel, net negative polarization charges are generated under the channel. These negative charges shift the threshold voltage of the GaN HEMT toward positive and therefore favor the realization of normally off operation. Using the engineered-buffer design coupled with our deep-recess V-gate structure, true normally off operation with reduced dc-RF dispersion was achieved.",
author = "Rongming Chu and Zhen Chen and DenBaars, {Steven P.} and Mishra, {Umesh K.}",
year = "2008",
month = "9",
day = "30",
doi = "10.1109/LED.2008.2004721",
language = "English (US)",
volume = "29",
pages = "1184--1186",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

V-Gate GaN HEMTs with engineered buffer for normally off operation. / Chu, Rongming; Chen, Zhen; DenBaars, Steven P.; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 29, No. 11, 30.09.2008, p. 1184-1186.

Research output: Contribution to journalArticle

TY - JOUR

T1 - V-Gate GaN HEMTs with engineered buffer for normally off operation

AU - Chu, Rongming

AU - Chen, Zhen

AU - DenBaars, Steven P.

AU - Mishra, Umesh K.

PY - 2008/9/30

Y1 - 2008/9/30

N2 - We propose and demonstrate V-gate GaN high electron mobility transistors (HEMTs) with engineered buffers for normally off operation. By incorporating an AlGaN buffer under the GaN channel, net negative polarization charges are generated under the channel. These negative charges shift the threshold voltage of the GaN HEMT toward positive and therefore favor the realization of normally off operation. Using the engineered-buffer design coupled with our deep-recess V-gate structure, true normally off operation with reduced dc-RF dispersion was achieved.

AB - We propose and demonstrate V-gate GaN high electron mobility transistors (HEMTs) with engineered buffers for normally off operation. By incorporating an AlGaN buffer under the GaN channel, net negative polarization charges are generated under the channel. These negative charges shift the threshold voltage of the GaN HEMT toward positive and therefore favor the realization of normally off operation. Using the engineered-buffer design coupled with our deep-recess V-gate structure, true normally off operation with reduced dc-RF dispersion was achieved.

UR - http://www.scopus.com/inward/record.url?scp=55149119392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55149119392&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2004721

DO - 10.1109/LED.2008.2004721

M3 - Article

AN - SCOPUS:55149119392

VL - 29

SP - 1184

EP - 1186

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -