Vacancy growth and migration dynamics in atomically thin hexagonal boron nitride under electron beam irradiation

Nasim Alem, Rolf Erni, Christian Kisielowski, Marta D. Rossell, Peter Hartel, Bin Jiang, Will Gannett, A. Zettl

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Atomically thin hexagonal boron nitride (h-BN) is investigated using aberration-corrected ultra-high resolution electron microscopy under 80 kV electron beam. This study focuses on the in situ formation, growth and migration of vacancies in h-BN. This study also reveals interaction dynamics of edges and vacancies with adatoms and molecules under the electron beam. According to this investigation, boron monovacancies migrate through their second neighbor to reduce the surface energy of the membrane.

Original languageEnglish (US)
Pages (from-to)295-297
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume5
Issue number8
DOIs
StatePublished - Aug 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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