TY - JOUR
T1 - Vacancy growth and migration dynamics in atomically thin hexagonal boron nitride under electron beam irradiation
AU - Alem, Nasim
AU - Erni, Rolf
AU - Kisielowski, Christian
AU - Rossell, Marta D.
AU - Hartel, Peter
AU - Jiang, Bin
AU - Gannett, Will
AU - Zettl, A.
PY - 2011/8
Y1 - 2011/8
N2 - Atomically thin hexagonal boron nitride (h-BN) is investigated using aberration-corrected ultra-high resolution electron microscopy under 80 kV electron beam. This study focuses on the in situ formation, growth and migration of vacancies in h-BN. This study also reveals interaction dynamics of edges and vacancies with adatoms and molecules under the electron beam. According to this investigation, boron monovacancies migrate through their second neighbor to reduce the surface energy of the membrane.
AB - Atomically thin hexagonal boron nitride (h-BN) is investigated using aberration-corrected ultra-high resolution electron microscopy under 80 kV electron beam. This study focuses on the in situ formation, growth and migration of vacancies in h-BN. This study also reveals interaction dynamics of edges and vacancies with adatoms and molecules under the electron beam. According to this investigation, boron monovacancies migrate through their second neighbor to reduce the surface energy of the membrane.
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U2 - 10.1002/pssr.201105262
DO - 10.1002/pssr.201105262
M3 - Article
AN - SCOPUS:79961049354
VL - 5
SP - 295
EP - 297
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
ER -