Valley magnetoelectricity in single-layer MoS 2

Jieun Lee, Zefang Wang, Hongchao Xie, Kin Fai Mak, Jie Shan

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on the control of the electron spin degree of freedom (DOF) in materials such as multiferroics and conventional semiconductors. Here, we report a new form of the ME effect based on the valley DOF in two-dimensional Dirac materials. By breaking the three-fold rotational symmetry in single-layer MoS 2 via a uniaxial stress, we have demonstrated the pure electrical generation of valley magnetization in this material, and its direct imaging by Kerr rotation microscopy. The observed out-of-plane magnetization is independent of in-plane magnetic field, linearly proportional to the in-plane current density, and optimized when the current is orthogonal to the strain-induced piezoelectric field. These results are fully consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. Furthermore, the effect persists at room temperature, opening possibilities for practical valleytronic devices.

Original languageEnglish (US)
Pages (from-to)887-891
Number of pages5
JournalNature Materials
Volume16
Issue number9
DOIs
StatePublished - Sep 1 2017

Fingerprint

Magnetoelectric effects
valleys
Magnetization
magnetization
degrees of freedom
Microscopic examination
Current density
Electric fields
Semiconductor materials
Magnetic fields
Imaging techniques
Electrons
electron spin
curvature
current density
microscopy
electric fields
symmetry
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, J., Wang, Z., Xie, H., Mak, K. F., & Shan, J. (2017). Valley magnetoelectricity in single-layer MoS 2. Nature Materials, 16(9), 887-891. https://doi.org/10.1038/nmat4931
Lee, Jieun ; Wang, Zefang ; Xie, Hongchao ; Mak, Kin Fai ; Shan, Jie. / Valley magnetoelectricity in single-layer MoS 2. In: Nature Materials. 2017 ; Vol. 16, No. 9. pp. 887-891.
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Lee, J, Wang, Z, Xie, H, Mak, KF & Shan, J 2017, 'Valley magnetoelectricity in single-layer MoS 2', Nature Materials, vol. 16, no. 9, pp. 887-891. https://doi.org/10.1038/nmat4931

Valley magnetoelectricity in single-layer MoS 2. / Lee, Jieun; Wang, Zefang; Xie, Hongchao; Mak, Kin Fai; Shan, Jie.

In: Nature Materials, Vol. 16, No. 9, 01.09.2017, p. 887-891.

Research output: Contribution to journalArticle

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Lee J, Wang Z, Xie H, Mak KF, Shan J. Valley magnetoelectricity in single-layer MoS 2. Nature Materials. 2017 Sep 1;16(9):887-891. https://doi.org/10.1038/nmat4931