V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures

K. O. Schweitz, P. K. Wang, S. E. Mohney, D. Gotthold

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67 Scopus citations

Abstract

A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al0.3Ga 0.7N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with V/Al/Pt/Au layers after annealing at 650°C, which represents a decrease of 150°C compared to the Ti/Al/Pt/Au counterpart. This contact exhibits two orders of magnitude lower specific contact resistance compared to the Ti/Al/Pt/Au contacts studied in this work when annealed at temperatures less than 800°C, although the specific contact resistance of the Ti/Al/Pt/Au contacts is lower when annealed at higher temperatures. A contact resistance and specific contact resistance of 0.8±0.1mm and (1.4±0.3) ×10-5cm2, respectively, are obtained after annealing at 650°C for 45 s.

Original languageEnglish (US)
Pages (from-to)1954-1956
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
StatePublished - Mar 18 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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