Abstract
Silver is studied as a replacement for Au in V- and Ti-based Ohmic contacts to GaN-capped n- Al0.27 Ga0.73 NGaN heterostructures for high electron mobility transistors. An optimized VAlVAg contact provided a low contact resistance of 0.27 mm and specific contact resistance of 1.7× 10-6 cm2, and was much smoother than analogous Au-bearing metallizations. Transmission electron microscopy reveals a very limited reaction of the annealed metallization and semiconductor, leaving the Al0.27 Ga0.73 N layer intact. The majority of the Al0.27 Ga0.73 N interface is contacted by Ag-bearing phases. Silver has a lower work function than Au and facilitates the formation of a low-resistance Ohmic contact.
Original language | English (US) |
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Article number | 012103 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 1 |
DOIs | |
State | Published - Nov 19 2007 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)