VAlVAg Ohmic contacts to n-AlGaNGaN heterostructures with a thin GaN cap

M. A. Miller; S. E. Mohney

doi:10.1063/1.2753497

VAlVAg Ohmic contacts to n-AlGaNGaN heterostructures with a thin GaN cap

M. A. Miller, S. E. Mohney

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Abstract

Silver is studied as a replacement for Au in V- and Ti-based Ohmic contacts to GaN-capped n- Al0.27 Ga0.73 NGaN heterostructures for high electron mobility transistors. An optimized VAlVAg contact provided a low contact resistance of 0.27 mm and specific contact resistance of 1.7× 10-6 cm2, and was much smoother than analogous Au-bearing metallizations. Transmission electron microscopy reveals a very limited reaction of the annealed metallization and semiconductor, leaving the Al0.27 Ga0.73 N layer intact. The majority of the Al0.27 Ga0.73 N interface is contacted by Ag-bearing phases. Silver has a lower work function than Au and facilitates the formation of a low-resistance Ohmic contact.

Original language	English (US)
Article number	012103
Journal	Applied Physics Letters
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.2753497
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2753497

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@article{51cca20aff3f4561a84a3e630df13a48,

title = "VAlVAg Ohmic contacts to n-AlGaNGaN heterostructures with a thin GaN cap",

abstract = "Silver is studied as a replacement for Au in V- and Ti-based Ohmic contacts to GaN-capped n- Al0.27 Ga0.73 NGaN heterostructures for high electron mobility transistors. An optimized VAlVAg contact provided a low contact resistance of 0.27 mm and specific contact resistance of 1.7× 10-6 cm2, and was much smoother than analogous Au-bearing metallizations. Transmission electron microscopy reveals a very limited reaction of the annealed metallization and semiconductor, leaving the Al0.27 Ga0.73 N layer intact. The majority of the Al0.27 Ga0.73 N interface is contacted by Ag-bearing phases. Silver has a lower work function than Au and facilitates the formation of a low-resistance Ohmic contact.",

author = "Miller, {M. A.} and Mohney, {S. E.}",

note = "Funding Information: The authors are grateful to Shiping Guo at IQE-RF, LLC for growth of the Al x Ga 1 − x N ∕ Ga N layers. They would also like to thank the Center for Optical Technologies (ARO DAAD-19-02-2-0030), the National Science Foundation (DMR 0308786), Penn State{\textquoteright}s Materials Research Institute Nano Fabrication Network, and National Nanotechnology Infrastructure Network with Cornell University (NSF 0335765). ",

year = "2007",

doi = "10.1063/1.2753497",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

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TY - JOUR

T1 - VAlVAg Ohmic contacts to n-AlGaNGaN heterostructures with a thin GaN cap

AU - Miller, M. A.

AU - Mohney, S. E.

N1 - Funding Information: The authors are grateful to Shiping Guo at IQE-RF, LLC for growth of the Al x Ga 1 − x N ∕ Ga N layers. They would also like to thank the Center for Optical Technologies (ARO DAAD-19-02-2-0030), the National Science Foundation (DMR 0308786), Penn State’s Materials Research Institute Nano Fabrication Network, and National Nanotechnology Infrastructure Network with Cornell University (NSF 0335765).

PY - 2007

Y1 - 2007

N2 - Silver is studied as a replacement for Au in V- and Ti-based Ohmic contacts to GaN-capped n- Al0.27 Ga0.73 NGaN heterostructures for high electron mobility transistors. An optimized VAlVAg contact provided a low contact resistance of 0.27 mm and specific contact resistance of 1.7× 10-6 cm2, and was much smoother than analogous Au-bearing metallizations. Transmission electron microscopy reveals a very limited reaction of the annealed metallization and semiconductor, leaving the Al0.27 Ga0.73 N layer intact. The majority of the Al0.27 Ga0.73 N interface is contacted by Ag-bearing phases. Silver has a lower work function than Au and facilitates the formation of a low-resistance Ohmic contact.

AB - Silver is studied as a replacement for Au in V- and Ti-based Ohmic contacts to GaN-capped n- Al0.27 Ga0.73 NGaN heterostructures for high electron mobility transistors. An optimized VAlVAg contact provided a low contact resistance of 0.27 mm and specific contact resistance of 1.7× 10-6 cm2, and was much smoother than analogous Au-bearing metallizations. Transmission electron microscopy reveals a very limited reaction of the annealed metallization and semiconductor, leaving the Al0.27 Ga0.73 N layer intact. The majority of the Al0.27 Ga0.73 N interface is contacted by Ag-bearing phases. Silver has a lower work function than Au and facilitates the formation of a low-resistance Ohmic contact.

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DO - 10.1063/1.2753497

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SN - 0003-6951

IS - 1

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ER -

VAlVAg Ohmic contacts to n-AlGaNGaN heterostructures with a thin GaN cap

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