Vanadium oxide thin films alloyed with TI, Zr, Nb, and Mo for uncooled infrared imaging applications

Adem Ozcelik, Orlando Cabarcos, David L. Allara, Mark William Horn

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ∼20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

Original languageEnglish (US)
Pages (from-to)901-905
Number of pages5
JournalJournal of Electronic Materials
Volume42
Issue number5
DOIs
StatePublished - Jun 10 2013

Fingerprint

Vanadium
vanadium oxides
Infrared imaging
Oxide films
Thin films
thin films
Sputtering
oxide films
sputtering
Bolometers
Argon
bolometers
Transport properties
Transition metals
Charge transfer
grade
Electric properties
x ray diffraction
Diffraction
transport properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ∼20 at.{\%} range. Analysis of the film structures for the case of the 17{\%} Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.",
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Vanadium oxide thin films alloyed with TI, Zr, Nb, and Mo for uncooled infrared imaging applications. / Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark William.

In: Journal of Electronic Materials, Vol. 42, No. 5, 10.06.2013, p. 901-905.

Research output: Contribution to journalArticle

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AU - Cabarcos, Orlando

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AU - Horn, Mark William

PY - 2013/6/10

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