Vanadium oxide thin films for bolometric applications deposited by reactive pulsed dc sputtering

N. Fieldhouse, S. M. Pursel, R. Carey, M. W. Horn, S. S.N. Bharadwaja

Research output: Contribution to journalArticlepeer-review

27 Citations (SciVal)


Vanadium oxide (V O x) thin films were deposited by reactive pulse dc magnetron sputtering process using a pure vanadium metal target. The structural, microstructure, and electrical properties were correlated as a function of processing parameters such as substrate temperature, Ar:O partial pressures ratios, and pulsed dc power to fabricate these films. The V O x films deposited at various substrate temperatures between 30 and 300 °C using a range of oxygen to argon partial pressure ratios exhibited huge variation in their microstructure even though most of them are amorphous to x-ray diffraction technique. In addition, the electrical properties such as temperature coefficient of resistance (TCR), resistivity, and noise levels were influenced by film microstructure. The TCRs of the V O x films were in the range of -1.1% to -2.4% K-1 having resistivity values of 0.1-100 cm. In particular, films grown at lower substrate temperatures with higher oxygen partial pressures have shown finer columnar grain structure and exhibited larger TCR and resistivity.

Original languageEnglish (US)
Pages (from-to)951-955
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Vanadium oxide thin films for bolometric applications deposited by reactive pulsed dc sputtering'. Together they form a unique fingerprint.

Cite this