Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Joan M. Redwing; Yue Ke; Xin Wang; Chad Eichfeld; Xiaojun Weng; Chito E. Kendrick; Suzanne E. Mohney; Theresa S. Mayer

doi:10.1109/ISDRS.2011.6135144

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Joan M. Redwing, Yue Ke, Xin Wang, Chad Eichfeld, Xiaojun Weng, Chito E. Kendrick, Suzanne E. Mohney, Theresa S. Mayer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O ₂ and H ₂O, which results in the formation of a surface oxide layer that impedes nanowire growth.

Original language	English (US)
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135144
State	Published - 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country	United States
City	College Park, MD
Period	12/7/11 → 12/9/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ISDRS.2011.6135144

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Redwing, J. M., Ke, Y., Wang, X., Eichfeld, C., Weng, X., Kendrick, C. E., Mohney, S. E., & Mayer, T. S. (2011). Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135144] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135144

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abstract = "Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.",

author = "Redwing, {Joan M.} and Yue Ke and Xin Wang and Chad Eichfeld and Xiaojun Weng and Kendrick, {Chito E.} and Mohney, {Suzanne E.} and Mayer, {Theresa S.}",

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Redwing, JM, Ke, Y, Wang, X, Eichfeld, C, Weng, X, Kendrick, CE, Mohney, SE & Mayer, TS 2011, Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135144, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135144

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. / Redwing, Joan M.; Ke, Yue; Wang, Xin; Eichfeld, Chad; Weng, Xiaojun; Kendrick, Chito E.; Mohney, Suzanne E.; Mayer, Theresa S.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135144 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Redwing, Joan M.

AU - Ke, Yue

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AU - Eichfeld, Chad

AU - Weng, Xiaojun

AU - Kendrick, Chito E.

AU - Mohney, Suzanne E.

AU - Mayer, Theresa S.

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AB - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.

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