Abstract
Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.
| Original language | English (US) |
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| Title of host publication | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Event | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: Dec 7 2011 → Dec 9 2011 |
Publication series
| Name | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
|---|
Other
| Other | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 |
|---|---|
| Country | United States |
| City | College Park, MD |
| Period | 12/7/11 → 12/9/11 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
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Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. / Redwing, Joan M.; Ke, Yue; Wang, Xin; Eichfeld, Chad; Weng, Xiaojun; Kendrick, Chito E.; Mohney, Suzanne E.; Mayer, Theresa S.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135144 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires
AU - Redwing, Joan M.
AU - Ke, Yue
AU - Wang, Xin
AU - Eichfeld, Chad
AU - Weng, Xiaojun
AU - Kendrick, Chito E.
AU - Mohney, Suzanne E.
AU - Mayer, Theresa S.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.
AB - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.
UR - http://www.scopus.com/inward/record.url?scp=84863142202&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863142202&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2011.6135144
DO - 10.1109/ISDRS.2011.6135144
M3 - Conference contribution
AN - SCOPUS:84863142202
SN - 9781457717550
T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011
ER -