Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

Joan M. Redwing, Yue Ke, Xin Wang, Chad Eichfeld, Xiaojun Weng, Chito E. Kendrick, Suzanne E. Mohney, Theresa S. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - Dec 1 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

Fingerprint

Nanowires
Vapors
Liquids
Catalysts
Gold
Silicon
Carrier transport
Electronic states
Metals
Eutectics
Electric properties
Energy gap
Doping (additives)
Aluminum
Oxides

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Redwing, J. M., Ke, Y., Wang, X., Eichfeld, C., Weng, X., Kendrick, C. E., ... Mayer, T. S. (2011). Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135144] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135144
Redwing, Joan M. ; Ke, Yue ; Wang, Xin ; Eichfeld, Chad ; Weng, Xiaojun ; Kendrick, Chito E. ; Mohney, Suzanne E. ; Mayer, Theresa S. / Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).
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abstract = "Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.",
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Redwing, JM, Ke, Y, Wang, X, Eichfeld, C, Weng, X, Kendrick, CE, Mohney, SE & Mayer, TS 2011, Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135144, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135144

Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. / Redwing, Joan M.; Ke, Yue; Wang, Xin; Eichfeld, Chad; Weng, Xiaojun; Kendrick, Chito E.; Mohney, Suzanne E.; Mayer, Theresa S.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135144 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at 577C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O 2 and H 2O, which results in the formation of a surface oxide layer that impedes nanowire growth.

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Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE et al. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135144. (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135144