@inproceedings{cd67e4a798a6432dafee02fe0161014c,
title = "Vapor-liquid-solid growth of 〈110〉 silicon nanowire arrays",
abstract = "The epitaxial growth of 〈110〉 silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of 〈110〉 nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the 〈110〉 Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of 〈110〉 SiNWs.",
author = "Eichfeld, {Sarah M.} and Hainey, {Mel F.} and Haoting Shen and Kendrick, {Chito E.} and Fucinato, {Emily A.} and Joanne Yim and Black, {Marcie R.} and Redwing, {Joan M.}",
year = "2013",
doi = "10.1117/12.2026825",
language = "English (US)",
isbn = "9780819496706",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Nanoepitaxy",
note = "Nanoepitaxy: Materials and Devices V ; Conference date: 25-08-2013 Through 27-08-2013",
}