Vapor-liquid-solid growth of 〈110〉 silicon nanowire arrays

Sarah M. Eichfeld, Mel F. Hainey, Haoting Shen, Chito E. Kendrick, Emily A. Fucinato, Joanne Yim, Marcie R. Black, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations


The epitaxial growth of 〈110〉 silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl4 as the source gas. A high percentage of 〈110〉 nanowires was obtained at high temperatures and reduced SiCl4 partial pressures. Transmission electron microscopy characterization of the 〈110〉 Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl4 process. The predominance of {111} facets obtained under these conditions promotes the growth of 〈110〉 SiNWs.

Original languageEnglish (US)
Title of host publicationNanoepitaxy
Subtitle of host publicationMaterials and Devices V
StatePublished - 2013
EventNanoepitaxy: Materials and Devices V - San Diego, CA, United States
Duration: Aug 25 2013Aug 27 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherNanoepitaxy: Materials and Devices V
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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