The effect of growth temperature and inlet gas composition on the vapor-liquid-solid (VLS) growth of silicon-germanium (SiGe) alloy nanowires was studied. The growth conditions needed to produce nanowires with uniform and controlled alloy composition in both the radial and axial direction were identified. The structural properties and elemental compositions of the nanowires were characterized using transmission electron microscopy (TEM). The SiGe nanowires grown at 500°C were shorter due to the depletion of the Ge from the gas phase and deposition of Ge on the gold tips, which prevented the continuous growth of SiGe nanowires.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering