Vapor-liquid-solid growth of Si1-xGex and Ge/Si 1-xGex axial heterostructured nanowires

Sharis Minassian, Xiaojun Weng, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of growth conditions on the composition of Si 1-xGex nanowires fabricated by vapor-liquid-solid growth using Si2H6 and GeH4 sources was investigated. The use of Si2H6 resulted in an increase in Si incorporation in the Si1-xGex nanowires at lower growth temperatures compared to SiH4 which is more commonly used. A wide range of Ge compositions from -20-80% was achieved by changing the inlet gas ratio at a constant temperature in the range of 350-425°C. Using these conditions, Ge/Si1-xGex axial heterostructured nanowires were also fabricated at 375°C with Ge compositions of 92% and 66% in the SiGe segment and the morphology and interfacial compositional profile of the nanowires were examined.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages699-706
Number of pages8
Edition6
DOIs
Publication statusPublished - Dec 1 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Minassian, S., Weng, X., & Redwing, J. M. (2010). Vapor-liquid-solid growth of Si1-xGex and Ge/Si 1-xGex axial heterostructured nanowires. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 699-706). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487600