Variation impact on ser of combinational circuits

K. Ramakrishnan, R. Rajaraman, S. Suresh, N. Vijaykrishnan, Y. Xie, M. J. Irwin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Scopus citations

Abstract

Increasing variability not only affects the behavior of contemporary ICs but also their vulnerability to transient error phenomenon especially radiation induced soft errors. Such variations in device parameters are caused by static process variations, dynamic variations in power supply and temperature and slow degradation of individual devices due to phenomena like Hot Carrier Injection (HCI) and Negative Bias Temperature Instability (NBTI). In this paper , we analyze the impact of such variations on the Soft Error Rates (SER) of combinational logic circuits. Other contributions of this work also include tools that model threshold degradation of NMOS due to HCI and PMOS due to NBTI in logic circuits. Results were obtained for custom designed circuits and ISCAS-85 benchmarks. A detailed analysis of effect of threshold variations on SER is also presented with interesting observations.

Original languageEnglish (US)
Title of host publicationProceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007
Pages911-916
Number of pages6
DOIs
StatePublished - Aug 28 2007
Event8th International Symposium on Quality Electronic Design, ISQED 2007 - San Jose, CA, United States
Duration: Mar 26 2007Mar 28 2007

Publication series

NameProceedings - Eighth International Symposium on Quality Electronic Design, ISQED 2007

Other

Other8th International Symposium on Quality Electronic Design, ISQED 2007
CountryUnited States
CitySan Jose, CA
Period3/26/073/28/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Variation impact on ser of combinational circuits'. Together they form a unique fingerprint.

Cite this