TY - JOUR
T1 - Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics
AU - Chen, Xiaoshuang
AU - Liu, Guangbo
AU - Hu, Yunxia
AU - Cao, Wenwu
AU - Hu, Pingan
AU - Hu, Wenping
N1 - Funding Information:
This work is supported by the National Natural Science Foundation of China (NSFC, nos. 61172001, 61390502, and 21373068), and the National Key Basic Research Program of China (973 Program) under Grant no. 2013CB632900, and by the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (Grant no. 51521003) and by Self-Planned Task (no. SKLRS201607B) of State Key Laboratory of Robotics and System (HIT).
PY - 2018/1/26
Y1 - 2018/1/26
N2 - The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 ×108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.
AB - The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 ×108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.
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U2 - 10.1088/1361-6528/aa9d4f
DO - 10.1088/1361-6528/aa9d4f
M3 - Article
C2 - 29176065
AN - SCOPUS:85039730811
VL - 29
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 4
M1 - 045202
ER -