VERTICAL SHORT GATE FET STRUCTURE.

Research output: Contribution to journalArticle

Abstract

A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.

Original languageEnglish (US)
Pages (from-to)6418-6420
Number of pages3
JournalIBM technical disclosure bulletin
Volume25
Issue number12
StatePublished - Jan 1 1983

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Gates (transistor)
Field effect transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "VERTICAL SHORT GATE FET STRUCTURE.",
abstract = "A vertical short gate GaAs FET structure is constructed. The main manufacturing steps are briefly outlined.",
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language = "English (US)",
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journal = "IBM Tech Disclosure Bull",
issn = "0018-8689",
number = "12",

}

VERTICAL SHORT GATE FET STRUCTURE. / Jackson, Thomas Nelson.

In: IBM technical disclosure bulletin, Vol. 25, No. 12, 01.01.1983, p. 6418-6420.

Research output: Contribution to journalArticle

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