Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As

Michael Abraham, Shih Ying Yu, Won Hyuck Choi, Rinus T.P. Lee, Suzanne E. Mohney

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Successful application of the silicide-like NixInGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n+- In0.53Ga0.47As (ND = 3 × 1019cm-3) with a specific contact resistance (ρc) of 4.0 × 10-8± 7 × 10-9 Ω·cm2 and 4.6 × 10-8± 9 × 10-9 Ω·cm2, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρc is further reduced to 2.1 × 10-8± 2 × 10-9 Ω·cm2 and 1.8 × 10-8± 1 × 10-9 Ω·cm2 on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

Original languageEnglish (US)
Article number164506
JournalJournal of Applied Physics
Volume116
Issue number16
DOIs
StatePublished - Jan 1 2014

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low resistance
contact resistance
surface treatment
sulfides
electric contacts
annealing
caps
elimination
transmission electron microscopy
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Abraham, Michael ; Yu, Shih Ying ; Choi, Won Hyuck ; Lee, Rinus T.P. ; Mohney, Suzanne E. / Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 16.
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abstract = "Successful application of the silicide-like NixInGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n+- In0.53Ga0.47As (ND = 3 × 1019cm-3) with a specific contact resistance (ρc) of 4.0 × 10-8± 7 × 10-9 Ω·cm2 and 4.6 × 10-8± 9 × 10-9 Ω·cm2, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρc is further reduced to 2.1 × 10-8± 2 × 10-9 Ω·cm2 and 1.8 × 10-8± 1 × 10-9 Ω·cm2 on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.",
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Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As. / Abraham, Michael; Yu, Shih Ying; Choi, Won Hyuck; Lee, Rinus T.P.; Mohney, Suzanne E.

In: Journal of Applied Physics, Vol. 116, No. 16, 164506, 01.01.2014.

Research output: Contribution to journalArticle

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