VFAB: A novel 2-stage STTRAM sensing using voltage feedback and boosting

Seyedhamidreza Motaman, Swaroop Ghosh, Jaydeep P. Kulkarni

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Spin-torque-transfer RAM (STTRAM) is a promising technology for high density on-chip cache due to low standby power and high speed. However, the process variation of STTRAM poses serious challenge to sensing. We propose a non-destructive and low-power sensing scheme that exploits a voltage feedback and boosting technique to develop large sense margin. Monte Carlo simulation results in ST Microelectronics 65-nm technology show that the proposed sensing circuit achieves 807-mV worst case sense margin on average, read access pass yield of σ in typical corner and × reduction in read power compared to conventional voltage sensing.

Original languageEnglish (US)
Pages (from-to)1919-1928
Number of pages10
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Issue number6
StatePublished - Jun 2018

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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