Vibration of micromachined circular piezoelectric diaphragms

Eunki Hong, Susan Trolier-McKinstry, Robert Smith, Silai V. Krishnaswamy, Carl B. Freidhoff

Research output: Contribution to journalArticle

77 Scopus citations

Abstract

Electrically and mechanically excited resonances in micromachined circular piezoelectric diaphragms have been investigated. The diaphragm structures were piezoelectric unimorphs consisting of Pb(Zr 0.52,Ti 0.48)O 3 (PZT) films and thermally grown silicon oxide (SiO 2) layers. For electrical excitation, ring-shaped interdigitated (IDT) electrodes formed on the top of the PZT layer were used to induce strain in the diaphragms. The diaphragm structures behaved much like circular membranes in which the membrane tension was ∼206 N/rn, at the fundamental modes. For higher modes, the resonance frequencies deviated from the theoretical values due to the finite stiffness of the diaphragms. Under mechanical drive, both symmetric and asymmetric modes were excited. However, for electrical excitation, the symmetric modes were dominant due to the symmetry of the driving IDT electrodes. At a pressure of 727 Torr, the quality factor was ∼250, and this rose to 2000 at pressures below 1 Torr. When a forward bias was applied to the diaphragm, the membrane tension decreased, but under reverse biases the tension increased. However, because of repoling under reverse biases greater than the coercive field of the PZT film, the achievable increase in the membrane tension was Hmited. In the diaphragm structure, the nonlinear vibration was governed by geometric nonlinearlty rather than material nonlinearity. In addition, evidence of non-180° domain wall motion of the PZT layer in released diaphragms was observed.

Original languageEnglish (US)
Pages (from-to)697-705
Number of pages9
JournalIEEE transactions on ultrasonics, ferroelectrics, and frequency control
Volume53
Issue number4
DOIs
StatePublished - Apr 2006

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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