Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth

Hangfeng Ji, Martin Kuball, Robert A. Burke, Joan Marie Redwing

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

GaN nanowires synthesized by Ni-assisted catalytic vapour-liquid-solid growth at different temperatures were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), micro-Raman spectroscopy, and photoluminescence spectroscopy. The nanowires exhibit low defect density. The growth direction of the nanowires is []. For nanowires grown at 800°C, Raman scattering is consistent with the presence of point defects and subsequently yellow luminescence dominating their photoluminescence properties. A low free carrier concentration of less than 1017 cm-3 is present in the nanowires. In contrast, for nanowires grown at 900°C, strong phonon-plasmon coupling was evidenced, suggesting a free carrier concentration in excess of the mid-1018 cm-3 region. Photoluminescence spectra show strong near-band-edge luminescence and negligible yellow luminescence. A Ni-related luminescence peak was observed at 3.436 eV at 80 K. Raman and photoluminescence results obtained from individual nanowires demonstrate that the nanowire crystalline quality improves not only with increasing growth temperature, but also along the nanowire growth direction.

Original languageEnglish (US)
Article number445704
JournalNanotechnology
Volume18
Issue number44
DOIs
StatePublished - Nov 7 2007

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Nanowires
Optical properties
Luminescence
Photoluminescence
Carrier concentration
Photoluminescence spectroscopy
Defect density
Growth temperature
Point defects
Raman spectroscopy
Raman scattering
Vapors
Crystalline materials
Transmission electron microscopy
Scanning electron microscopy
Liquids

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "GaN nanowires synthesized by Ni-assisted catalytic vapour-liquid-solid growth at different temperatures were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), micro-Raman spectroscopy, and photoluminescence spectroscopy. The nanowires exhibit low defect density. The growth direction of the nanowires is []. For nanowires grown at 800°C, Raman scattering is consistent with the presence of point defects and subsequently yellow luminescence dominating their photoluminescence properties. A low free carrier concentration of less than 1017 cm-3 is present in the nanowires. In contrast, for nanowires grown at 900°C, strong phonon-plasmon coupling was evidenced, suggesting a free carrier concentration in excess of the mid-1018 cm-3 region. Photoluminescence spectra show strong near-band-edge luminescence and negligible yellow luminescence. A Ni-related luminescence peak was observed at 3.436 eV at 80 K. Raman and photoluminescence results obtained from individual nanowires demonstrate that the nanowire crystalline quality improves not only with increasing growth temperature, but also along the nanowire growth direction.",
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Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth. / Ji, Hangfeng; Kuball, Martin; Burke, Robert A.; Redwing, Joan Marie.

In: Nanotechnology, Vol. 18, No. 44, 445704, 07.11.2007.

Research output: Contribution to journalArticle

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AB - GaN nanowires synthesized by Ni-assisted catalytic vapour-liquid-solid growth at different temperatures were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), micro-Raman spectroscopy, and photoluminescence spectroscopy. The nanowires exhibit low defect density. The growth direction of the nanowires is []. For nanowires grown at 800°C, Raman scattering is consistent with the presence of point defects and subsequently yellow luminescence dominating their photoluminescence properties. A low free carrier concentration of less than 1017 cm-3 is present in the nanowires. In contrast, for nanowires grown at 900°C, strong phonon-plasmon coupling was evidenced, suggesting a free carrier concentration in excess of the mid-1018 cm-3 region. Photoluminescence spectra show strong near-band-edge luminescence and negligible yellow luminescence. A Ni-related luminescence peak was observed at 3.436 eV at 80 K. Raman and photoluminescence results obtained from individual nanowires demonstrate that the nanowire crystalline quality improves not only with increasing growth temperature, but also along the nanowire growth direction.

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