Visible Light Photolysis of Hydrogen Iodide Using Sensitized Layered Semiconductor Particles

Yeong Il Kim, Samer Salim, Munir J. Huq, Thomas E. Mallouk

Research output: Contribution to journalArticle

170 Citations (Scopus)

Abstract

Surface sensitization of internally platinized layered oxide semiconductors K 4−x H x Nb 6 O 17 ·nH 2 O (x ≈ 2.5), H 2 Ti 3 O 7 , and HTiNb0 5 by RuL 3 2+ (L = 4,4′-dicarboxy-2,2′-bipyridine) yields photocatalysts for the production of H 2 and I 3 in aqueous iodide solutions. Flash photolysis experiments show that, at pH 3.0, excited-state RuL 3 2+ injects an electron into K 4−x H x Nb 6 O 17 ·nH 2 O and is rapidly re-reduced by I . Steady-state photolysis at 450 nm in 50 mM aqueous KI (pH 3.0) yields H 2 and I 3 in stoichiometric amounts, with an initial quantum yield of 0.3%. While H 2 and I 3 , once formed, do not recombine at an observable rate, the rate of hydrogen evolution decreases as the concentration of 1 3 increases in the solution.

Original languageEnglish (US)
Pages (from-to)9561-9563
Number of pages3
JournalJournal of the American Chemical Society
Volume113
Issue number25
DOIs
StatePublished - Dec 1 1991

Fingerprint

Semiconductors
Photolysis
Light
Hydrogen
Iodides
Quantum yield
Photocatalysts
Excited states
Oxides
Electrons
Experiments
hydroiodic acid
Layered semiconductors
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Kim, Yeong Il ; Salim, Samer ; Huq, Munir J. ; Mallouk, Thomas E. / Visible Light Photolysis of Hydrogen Iodide Using Sensitized Layered Semiconductor Particles. In: Journal of the American Chemical Society. 1991 ; Vol. 113, No. 25. pp. 9561-9563.
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abstract = "Surface sensitization of internally platinized layered oxide semiconductors K 4−x H x Nb 6 O 17 ·nH 2 O (x ≈ 2.5), H 2 Ti 3 O 7 , and HTiNb0 5 by RuL 3 2+ (L = 4,4′-dicarboxy-2,2′-bipyridine) yields photocatalysts for the production of H 2 and I 3 − in aqueous iodide solutions. Flash photolysis experiments show that, at pH 3.0, excited-state RuL 3 2+ injects an electron into K 4−x H x Nb 6 O 17 ·nH 2 O and is rapidly re-reduced by I − . Steady-state photolysis at 450 nm in 50 mM aqueous KI (pH 3.0) yields H 2 and I 3 − in stoichiometric amounts, with an initial quantum yield of 0.3{\%}. While H 2 and I 3 − , once formed, do not recombine at an observable rate, the rate of hydrogen evolution decreases as the concentration of 1 3 − increases in the solution.",
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Visible Light Photolysis of Hydrogen Iodide Using Sensitized Layered Semiconductor Particles. / Kim, Yeong Il; Salim, Samer; Huq, Munir J.; Mallouk, Thomas E.

In: Journal of the American Chemical Society, Vol. 113, No. 25, 01.12.1991, p. 9561-9563.

Research output: Contribution to journalArticle

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PY - 1991/12/1

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AB - Surface sensitization of internally platinized layered oxide semiconductors K 4−x H x Nb 6 O 17 ·nH 2 O (x ≈ 2.5), H 2 Ti 3 O 7 , and HTiNb0 5 by RuL 3 2+ (L = 4,4′-dicarboxy-2,2′-bipyridine) yields photocatalysts for the production of H 2 and I 3 − in aqueous iodide solutions. Flash photolysis experiments show that, at pH 3.0, excited-state RuL 3 2+ injects an electron into K 4−x H x Nb 6 O 17 ·nH 2 O and is rapidly re-reduced by I − . Steady-state photolysis at 450 nm in 50 mM aqueous KI (pH 3.0) yields H 2 and I 3 − in stoichiometric amounts, with an initial quantum yield of 0.3%. While H 2 and I 3 − , once formed, do not recombine at an observable rate, the rate of hydrogen evolution decreases as the concentration of 1 3 − increases in the solution.

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